Film strain sensor configuration including a processor
US10883815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2019 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Apr 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N35/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a sensor includes a film portion, one or more detectors fixed to the film portion, and a processor. The detector includes first and second detecting elements. The first detecting element includes a first magnetic layer. The second detecting element includes a second magnetic layer. A first change rate of a first signal is higher than a second change rate of the first signal. The first signal corresponds to a first electrical resistance of the first detecting element. A change rate of a second signal with respect to the change of the magnitude of the strain is higher than the second change rate. The second signal corresponds to a second electrical resistance of the second detecting element. The processor is configured to perform at least a first operation of outputting a second value. The second value is based on the second signal and a first value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.