Mn—Zn—W—O sputtering target and production method therefor
US10886112B2 · kind B2 · utility
0Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2016 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | May 17, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/80
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided are a Mn—Zn—W—O sputtering target having excellent crack resistance and a production method therefor. The Mn—Zn—W—O sputtering target has a chemical composition containing Mn, Zn, W, and O. From an X-ray diffraction pattern of the Mn—Zn—W—O sputtering target, a ratio PMnO/PW of a maximum peak intensity PMnO of a peak due to a manganese oxide composed only of Mn and O to a maximum peak intensity PW of a peak due to W is 0.027 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.