LED filament comprising conversion layer
US10886258B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2018 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Nov 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An LED filament includes semiconductor chips arranged on a top side of a radiation-transmissive carrier, and at least partly covered with a radiation-transmissive first layer, the first layer and an underside of the carrier are covered with a second layer, phosphor is provided in the second layer, the phosphor is configured to shift a wavelength of the radiation of the semiconductor chip, no phosphor or phosphor including less than 50% of the concentration of the phosphor of the second layer is provided in the first layer, the carrier is formed from a further first layer and a carrier layer having cutouts, the carrier layer is arranged on the further first layer, the semiconductor chips are arranged on the further first layer in the regional of the cutouts of the carrier layer, and the first layer and the further first layer are at least partially covered with the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.