Patent · US Active

Fabrication of optical metasurfaces

US10886317B2 · kind B2 · utility

5Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 6, 2020
Grant dateJan 5, 2021
Priority date
Expiry dateApr 6, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/334
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

The method is provided for fabricating an optical metasurface. The method may include depositing a conductive layer over a holographic region of a wafer and depositing a dielectric layer over the conducting layer. The method may also include patterning a hard mask on the dielectric layer. The method may further include etching the dielectric layer to form a plurality of dielectric pillars with a plurality of nano-scale gaps between the pillars.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.