Semiconductor device with well region and protection region electrically connected by connection region
US10886401B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2016 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | May 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device includes: a substrate; a drift region formed on a main surface of the substrate; a well region formed in a main surface of the drift region; a source region formed in the well region; a gate groove formed from the main surface of the drift region in a perpendicular direction while being in contact with the source region, the well region, and the drift region; a drain region formed in the main surface of the drift region; a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween; a protection region formed on a surface of the gate insulating film facing the drain region; and a connection region formed in contact with the well region and the protection region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.