Thin film transistor, display substrate, method for manufacturing the same, and display device
US10886410B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 24, 2019 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Apr 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/8791
Abstract
Provided is a thin film transistor, including: a conductive light shielding layer; a metal oxide layer arranged on the light shielding layer; a buffer layer, an active layer, a gate insulating layer, a gate electrode, and an interlayer insulating layer arranged in sequence on the metal oxide layer, the interlayer insulating layer and the buffer layer comprising a first via hole and a second via hole for exposing the active layer, and a third via hole for exposing the metal oxide layer, in which a portion of the metal oxide layer exposed through the third via hole is a conductive portion, and other portions are insulative; and a source electrode and a drain electrode arranged on the interlayer insulating layer, in which the source electrode is connected to the active layer through the first via hole, and the drain electrode is connected to the active layer through the second via hole and connected to the conductive portion through the third via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.