Group III nitride semiconductor with InGaN diffusion blocking layer
US10886435B2 · kind B2 · utility
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Key dates
| Filing date | Oct 23, 2018 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Oct 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a high-quality group III nitride semiconductor. A group III nitride semiconductor including an n-GaN layer composed of AlxGa1-xN (0≤x<1), an InGaN layer disposed on the n-GaN layer and composed of InGaN, an n-AlGaN layer disposed on the InGaN layer and composed of n-type AlyGa1-yN (0≤y<1), and a functional layer disposed on the n-AlGaN layer, wherein the concentration of Mg in the n-GaN layer is higher than the concentration of Mg in the n-AlGaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.