Spin orbit torque magnetic RAM
US10886457B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2018 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Nov 20, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A spin torque magnetic RAM according to the present invention includes at least one row selection line positioned on a silicon substrate to induce a spin orbit interaction therein; at least one first magnetic pattern positioned on the row selection line; a second magnetic pattern positioned on the first magnetic pattern; a tunnel barrier positioned on the second magnetic pattern; and a third magnetic pattern positioned on the tunnel barrier, wherein the first magnetic pattern is made of a cobalt film, the first magnetic pattern and the second magnetic pattern have a total thickness of 5 nm to form a free layer, and the third magnetic pattern is formed with a pinned layer in which a magnetization direction is fixed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.