Quantum dot light emitting diode (QLED) and manufacture method thereof, display panel

US10886485B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventor

• Dong Li · Beijing, CN

Key dates

• Filing date: Sep 27, 2018
• Grant date: Jan 5, 2021
• Expiry date: Sep 27, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K50/16

Abstract

A quantum dot light emitting diode (QLED) and a manufacture method thereof, a display panel are provided. The QLED includes a hole transport layer and a quantum dot light emitting layer, the hole transport layer includes a porous structure layer having pores, the quantum dot light emitting layer is disposed on the hole transport layer; the quantum dot light emitting layer contacts the porous structure layer, and a material of the quantum dot light emitting layer is disposed in at least a part of the pores.