Semiconductor laser and method for producing a semiconductor laser

US10886704B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Frank Singer · Regenstauf, DE
• Norwin von Malm · Nittendorf, DE
• Tilman Ruegheimer · Regensburg, DE
• Thomas Kippes · Dresden, DE

Key dates

• Filing date: Dec 11, 2019
• Grant date: Jan 5, 2021
• Expiry date: Dec 11, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/176
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).