Gate circuit and gate drive circuit for power semiconductor switch
US10886912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2019 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Apr 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a gate circuit and a gate drive circuit for a power semiconductor switch, including: a zener diode and a charge dissipation circuit. A first end of the zener diode is connected to a first end of the charge dissipation circuit and a gate of the power semiconductor switch, a second end of the zener diode is connected to a second end of the charge dissipation circuit and a second end of the power semiconductor switch. A first parasitic capacitor is formed between a first end and the gate of the power semiconductor switch, and a second parasitic capacitor is formed between the gate and the second end of the power semiconductor switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.