Image sensor with reduced noise
US10887536B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2018 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Jan 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a photoelectric conversion unit configured to receive light to generate an electric charge and provide the electric charge to a first node, a transfer transistor configured to provide a voltage level of the first node to a floating diffusion node in response to a first signal, a booster configured to increase a voltage level of the floating diffusion node in response to a second signal, a source follower transistor configured to provide the voltage level of the floating diffusion node to a second node, and a selection transistor configured to provide a voltage level of the second node to a pixel output terminal in response to a third signal. After the selection transistor is turned on, the booster is enabled, and before the transfer transistor is turned on, the booster is disabled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.