Patent · US Active

Power semiconductor module

US10888941B2 · kind B2 · utility

0Cited by
1References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 24, 2018
Grant dateJan 12, 2021
Priority date
Expiry dateOct 24, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/13055
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

When a distance between an end portion of a brazing material and a downward extended line of a side surface of an insulating substrate is taken as “a”, and a distance between an end portion of a solder resist on the side of a solder and the downward extended line of the side surface of the insulating substrate is taken as “b”, the positional relationship a<b is satisfied. The position of the end portion of the solder is regulated by the solder resist, and the position of the end portion of the brazing material on the side of the side surface of the insulating substrate is closer to the side of the side surface of the insulating substrate than to the position of the end portion of the solder on the side of the side surface of the insulating substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.