Semipolar or nonpolar group III-nitride substrates
US10892159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2017 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Feb 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the disclosure provide for mechanisms for producing group III-nitride substrates. In accordance with some embodiments, a method for producing a group III-nitride substrate is provided. The method may include: forming, on a growth template, an epitaxial layer of a group III-nitride material comprising a surface with a first crystallographic orientation, wherein the first crystallographic orientation comprises a semipolar orientation or a nonpolar orientation; and separating the epitaxial layer of the group III-nitride material from the growth template to produce the group III-nitride substrate, wherein the growth template comprises a semiconductor layer of the group III-nitride material. The group III-nitride material may include gallium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.