Semiconductor device with side wall protection film for bond pad and wiring
US10892163B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 2018 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Apr 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of manufacturing a semiconductor device includes: forming a conductive film including a first metal-containing film and an anti-reflection film including a second metal-containing film which is laminated on the first metal-containing film, the second metal-containing film being different from the first metal-containing film and laminated on the first metal-containing film; patterning the conductive film; forming side wall protection films on side surfaces of the patterned conductive film; etching the anti-reflection film in the patterned conductive film, after formation of the side wall protection films; forming a passivation film on the first metal-containing film and the side wall protection films; and forming, in the passivation film, an opening portion in which a part of a top surface of the first metal-containing film is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.