Patent · US Active

Back-side illuminated image sensor

US10892292B2 · kind B2 · utility

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0References

12Claims

0Family size

Assignee

STMicroelectronics (Crolles 2) SAS · FR

Inventors

Daniel Benoit · Alameda, US
Olivier Hinsinger · Barraux, FR
Emmanuel Gourvest · Voiron, FR

Key dates

Filing date	Apr 17, 2019
Grant date	Jan 12, 2021
Priority date	—
Expiry date	Jul 24, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/811

Abstract

A back-side illuminated image sensor includes memory regions formed in a semiconductor wafer. Each memory region is located between two opaque walls which extend into the semiconductor wafer. An opaque screen is arranged at the rear surface of the memory region and in electrical contact with the opaque walls.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.