Integration of confined phase change memory with threshold switching material

US10892413B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Robert L. Bruce · White Plains, US
• Fabio Carta · Pleasantville, US
• Wanki Kim · Chappaqua, US
• Chung H. Lam · Williston, US

Key dates

• Filing date: Jan 17, 2017
• Grant date: Jan 12, 2021
• Expiry date: Jan 17, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase change memory array and method for fabricating the same. The phase change memory array includes a plurality of bottom electrodes, top electrodes, and memory pillars. Each of the memory pillars includes phase change material surrounded by a dielectric casing. The phase change material is positioned between, and in series circuit with, a respective bottom electrode from the bottom electrodes and a respective top electrode from the top electrodes. A continuous layer of selector material is positioned between the memory pillars and the plurality of bottom electrodes. The selector material is configured to conduct electricity only when a voltage across the selector material exceeds a voltage threshold.