Content addressable memory circuits with threshold switching memristors
US10896731B1 · kind B1 · utility
8Cited by
1References
20Claims
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Assignee
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Key dates
| Filing date | Jul 30, 2019 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | Jul 30, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0009
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A content addressable memory (CAM) structure is provided. The CAM comprises a plurality of CAM cells communicatively coupled to processing circuitry. A plurality of threshold switching (TS) memristors are included, each configured to connect to a one of the plurality of CAM cells, with the first end connected to the CAM cell and the second connected to a match line. A discharge transistor is included and configured to discharge any charge on the match line in response to the CAM receiving a command to perform a search.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.