Patent · US Active

Contact in RF-switch

US10896787B2 · kind B2 · utility

4Cited by
2References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 14, 2016
Grant dateJan 19, 2021
Priority date
Expiry dateNov 21, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01H2001/0084
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

The present invention generally relates to a mechanism for making a MEMS switch that has a robust RF-contact by avoiding currents to run through a thin sidewall in a via from the RF-contact to the underlying RF-electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.