Semiconductor device
US10896961B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2018 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | Feb 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
Abstract
A semiconductor device is provided comprising an active portion and a terminating structure. The semiconductor device is provided comprising the active portion provided in the semiconductor substrate and a terminating structure provided at a termination of the front surface side of the semiconductor substrate and that mitigates an electric field of the termination. In the electric field distribution of the front surface side of the terminating structure, during rated voltage application, an electric field at the end portion of the active portion side may be smaller than a maximum value of an electric field distribution of the front surface side. In addition, the electric field distribution of the terminating structure may have a maximum peak of the electric field on the edge side opposite to the active portion with respect to a center of the terminating structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.