Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals
US10897121B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2019 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | Sep 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A silicon photonic chip includes a silicon on insulator wafer and an electro-optical device on the silicon on insulator wafer. The electro-optical device is a lateral current injection electro-optical device that includes a slab having a pair of structured doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair of structured doped layers includes an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer is configured as a two-dimensional photonic crystal. A separation section extends between the pair of structured doped layers, the separation section fully separates the p-doped layer from the n-doped layer. The separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.