Global shutter image sensor
US10897586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2019 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | Jun 27, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4413
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In one example, a method comprises: enabling a photodiode to, in response to incident light, accumulate residual charge, and to transfer overflow charge to a first charge storage device and a second charge storage device when the photodiode saturates; disconnecting the second charge storage device from the first charge storage device; enabling the photodiode to transfer the residual charge to the first charge storage device to cause the charge sensing unit to output a first voltage; quantizing the first voltage to generate a first digital value to measure the residual charge; connecting the second charge storage device with the first charge storage device to cause the charge sensing unit to output a second voltage; quantizing the second voltage to generate a second digital value to measure the overflow charge; and generating a digital representation of the incident light intensity based on the first digital value and the second digital value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.