Alkoxysilylamine compounds and applications thereof

US10899500B2 · kind B2 · utility

Assignee

• Versum Materials US, LLC · US

Inventors

• Manchao Xiao · San Diego, US
• Ronald Martin Pearlstein · San Marcos, US
• Richard Ho · Anaheim, US
• Daniel P. Spence · Carlsbad, US
• Xinjian Lei · Vista, US

Key dates

• Filing date: Mar 15, 2019
• Grant date: Jan 26, 2021
• Expiry date: Mar 15, 2039

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/00
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

Described herein is an FCVD process for depositing a silicon-containing film from at least one alkoxysilylamine precursor having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group.