Method and apparatus for depositing a material
US10900114B2 · kind B2 · utility
2Cited by
5References
18Claims
0Family size
Inventors
Key dates
| Filing date | Mar 30, 2016 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Mar 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.