Chalcogenide film including a noble metal chalcogenide material, device including the chalcogenide film, and method of forming the chalcogenide film
US10900115B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Aug 31, 2017 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Oct 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/121
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MCx. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.