RF sensing apparatus of plasma processing chamber and plasma processing chamber including same
US10901007B2 · kind B2 · utility
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3References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 29, 2019 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Apr 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.