Planarization of optical substrates
US10901121B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 7, 2018 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Jan 6, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/33
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect includes depositing a planarization layer over the mirror substrate and the nodular defect, depositing a layer of silicon dioxide over the planarization layer, and etching away a portion of the layer of silicon dioxide. The method also includes thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide and repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.