Patent · US Active

Planarization of optical substrates

US10901121B2 · kind B2 · utility

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18Claims
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Key dates

Filing dateNov 7, 2018
Grant dateJan 26, 2021
Priority date
Expiry dateJan 6, 2039

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC03C2218/33
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect includes depositing a planarization layer over the mirror substrate and the nodular defect, depositing a layer of silicon dioxide over the planarization layer, and etching away a portion of the layer of silicon dioxide. The method also includes thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide and repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.