Optical phase shifter and optical switch device using ferroelectric material
US10901246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2019 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Aug 1, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0516
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.