High-resolution micro-LED display device and manufacturing method of the same
US10903195B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2019 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Aug 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a micro-LED display device comprises forming a plurality of thin-film transistor array areas that includes a plurality of thin-film transistor arrays on a first substrate; forming a plurality of micro-LED array areas that includes a plurality of micro-LED arrays on a second substrate; transferring the plurality of micro-LED array areas that correspond to the plurality of thin-film transistor array areas onto the first substrate; forming a bank film on a third substrate over the first substrate; patterning the bank film to form a first bank layer that corresponds to a boundary area between the plurality of micro-LED arrays and a second bank layer that corresponds to an edge area of the plurality of micro-LED array areas, to form a pixel area and a pixel array area, and to remove the bank film in a boundary area between the second bank layers adjacent to each other; cutting the third substrate and the first substrate along a scribe zone that is set in a boundary area between the second bank layers adjacent to each other; and separating a plurality of pixel arrays that includes the plurality of thin-film transistor arrays and the plurality of micro-LED arrays…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.