Semiconductor device
US10903202B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2018 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Nov 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first semiconductor region of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, each comprising a first part, on the first semiconductor region, wherein the second semiconductor regions are spaced apart in a first direction, a third semiconductor region of the first conductivity type on each of the second semiconductor regions, an insulation portion between two of the second semiconductor regions, the insulation portion having one side in contact with one of the first parts and the other side in contact with one of the third semiconductor regions, a first electrode within the insulation portion, a gate electrode spaced apart from the first electrode and within the insulation portion, and a second electrode on the third semiconductor region and electrically connected to the first electrode and the third semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.