Thin film transistor substrate and display using the same
US10903246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2015 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Nov 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.