Semiconductor device
US10903308B2 · kind B2 · utility
0Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2019 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Jul 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.