Capacitor structure and semiconductor device including the same
US10903310B2 · kind B2 · utility
2Cited by
10References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2020 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Feb 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A capacitor structure includes a plurality of bottom electrodes horizontally spaced apart from each other, a support structure covering sidewalls of the bottom electrodes, a top electrode surrounding the support structure and the bottom electrodes, and a dielectric layer interposed between the support structure and the top electrode, and between the top electrode and each of the bottom electrodes. An uppermost surface of the support structure is positioned at a higher level than an uppermost surface of each of the bottom electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.