Layered material based quantum light emitting device

US10903396B1 · kind B1 · utility

Assignees

• International Business Machines Corporation · US
• Cambridge Enterprise Limited · GB

Inventors

• Michael Engel · Karlsruhe, DE
• Mathias B. Steiner · Rio de Janeiro, BR
• Andrea Ferrari · Orbassano, IT
• Antonio Lombardo · Cambourne, GB
• Matteo Barbone · Munich, DE
• Mete Atature · Cambridge, GB
• Carmen Palacios Berraquero · London, GB
• Dhiren Kara · Cambridge, GB
• Ilya Goykhman · Haifa, IL

Key dates

• Filing date: Aug 20, 2019
• Grant date: Jan 26, 2021
• Expiry date: Aug 20, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/872

Abstract

A quantum light emitting device includes a carrier substrate, an insulator, a first semiconductor device, a second semiconductor device, a first contact, and a second contact. The quantum light device includes a carrier substrate comprising silicon and configured with an electrically insulating top surface. The quantum light device also includes an insulator configured on the carrier substrate. The quantum light device includes a first semiconductor structure comprising a first semiconductor material configured on the insulator. Further, the quantum light device includes a second semiconductor structure comprising a second semiconductor material configured on the insulator, with an overlap region of the second semiconductor structure electrically coupling with the first semiconductor structure, a dimensional characteristic of the overlap region being configured to limit a photon emission from the overlap region to a single photon.