Actuator layer patterning with topography
US10906802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2019 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Jun 13, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/036
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.