Highly twinned, oriented polycrystalline diamond film and method of manufacture thereof
US10910127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2019 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Jul 3, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction≥70% of the total number of diamond crystallites forming the polycrystalline diamond film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.