High voltage ESD protection device

US10910362B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Ming Qiao · Chengdu, CN
• Zhao Qi · Chengdu, CN
• Jiamu Xiao · Chengdu, CN
• Longfei Liang · Chengdu, CN
• Danye LIANG · Chengdu, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Jun 25, 2018
• Grant date: Feb 2, 2021
• Expiry date: Jun 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

The present invention provides a high voltage ESD protection device including a P-type substrate; a first NWELL region located on the left of the upper part of the P-type substrate; an NP contact region located on the upper part of the first NWELL region; an N+ contact region located on the right of the upper part of the P-type substrate apart from the first NWELL region; a P+ contact region tangential to the right side of the N+ contact region; a NTOP layer arranged on the right of the NP contact region inside the first NWELL region. The NP contact region is connected to a metal piece to form a metal anode. The N+ contact region and the P+ contact region are connected by a metal piece to form a metal cathode.