Image sensor
US10910419B2 · kind B2 · utility
0Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2019 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | May 21, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor is provided and includes a semiconductor substrate having a first conductivity type, a photoelectric conversion region in the semiconductor substrate and having a second conductivity type, an oxide semiconductor pattern adjacent to a first surface of the semiconductor substrate, and a transfer gate on the first surface and adjacent to the photoelectric conversion region and the oxide semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.