Apparatuses with atomically-thin ohmic edge contacts between two-dimensional materials, methods of making same, and devices comprising same
US10910473B2 · kind B2 · utility
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24Claims
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Key dates
| Filing date | Jun 13, 2017 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Jun 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatuses comprising a substrate; a monolayer graphene film disposed on at least a portion of the substrate; and a single-layer transition metal dichalcogenide (TMD) disposed only on the substrate and lateral edges of the monolayer graphene film, methods of making the apparatuses, and devices comprising one or more of the apparatuses. The apparatuses have a one-dimensional ohmic edge contact between the monolayer graphene and monolayer semiconducting TMDs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.