Group III nitride semiconductor substrate and method for manufacturing group III nitride semiconductor substrate
US10910474B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2017 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Jan 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a group III nitride semiconductor substrate includes a preparation step S10 for preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a <0002> direction of the sapphire substrate and a <10-10> direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step S20 for epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.