Patent · US Active

Quantum dot devices with fins and partially wrapped gates

US10910488B2 · kind B2 · utility

1Cited by
0References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 26, 2018
Grant dateFeb 2, 2021
Priority date
Expiry dateJun 26, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D48/40
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin has a first side face and a second side face, and the fin includes a quantum well layer; and a gate above the fin, wherein the gate extends down along the first side face.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.