Stucture and method for SIC based protection device
US10910501B2 · kind B2 · utility
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3References
13Claims
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Key dates
| Filing date | Sep 5, 2018 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Sep 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device may include a P-N diode, formed within a SiC substrate. The device may include an N-type region formed within the SiC substrate, a P-type region, formed in an upper portion of the N-type region; and an implanted N-type layer, the implanted N-type layer being disposed between the P-type region and the N-type region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.