Light emitting device having insulation layer of varying thickness and manufacturing method thereof
US10910584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2018 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | May 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
Abstract
A light emitting device includes a substrate. A thin film transistor is disposed on the substrate. A first electrode is connected to the thin film transistor. A second electrode at least partially overlaps the first electrode. A first partition wall is disposed between the first electrode and the second electrode. An insulating layer is disposed between the thin film transistor and the first electrode. The insulating layer includes a first part having a first thickness and a second part having a second thickness that is different than the first thickness. The second part of the insulating layer at least partially overlaps the first partition wall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.