Patent · US Active

Microelectronic device

US10910667B2 · kind B2 · utility

0Cited by

3References

14Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Sami Oukassi · Saint-Égrève, FR
Xavier Baillin · Crolles, FR

Key dates

Filing date	Nov 5, 2018
Grant date	Feb 2, 2021
Priority date	—
Expiry date	Jan 9, 2039

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

This invention relates to a microelectronic device comprising: a first support, a second support, first respective faces of the first support and second support being arranged opposite, and a sealing layer between said first faces, characterized in that the sealing layer comprises at least one layer of an ionic conductive material of formula LixPyOzNw, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.