High power radio frequency switches with low leakage current and low insertion loss
US10911040B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2019 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Aug 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0054
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of transistors and is configured to selectively connect one of a transmit path or a receive path to an antenna. All of the transistors are configured to be in an on state when the RF switch operates in a high power mode and all of the transistors are configured to be in an off state when the RF switch operates in a low power mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.