Segmented direct gate drive circuit of a depletion mode GaN power device
US10911045B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2020 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Aug 28, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A segmented direct gate drive circuit of a depletion mode GaN power device, a gate voltage of the GaN power device is charged from a negative voltage turn-off level to a threshold voltage of the GaN power device; when the gate voltage of the GaN power device is charged to the threshold voltage of the GaN power device, a current mirror charging module first turns on less than N of charging current mirror modules to charge the gate voltage of the GaN power device from the threshold voltage of the GaN power device to a Miller platform voltage of the GaN power device, and turns on N charging current mirror modules to charge the gate voltage of the GaN power device from the Miller platform voltage of the GaN power device to a zero level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.