Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound
US10913754B2 · kind B2 · utility
1Cited by
13References
15Claims
0Family size
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Key dates
| Filing date | Jan 18, 2019 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Jan 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/351
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below,
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.