Broadband tunable THz wave manipulator and the method to form the same
US10914970B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2018 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Dec 31, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/13
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a semiconductor substrate having a metasurface layer configured with multiple pairs of finger portions in a repeating arrangement. The multiple pairs of finger portions are electrically configurable to modulate a radiation signal received by the semiconductor device. Each pair of finger portions includes first and second members where the first member is doped with a first dopant and the second member is doped with a second dopant being different to the first dopant. Any two adjacent first or second members are configured to be separated by at least deep subwavelength to enable the repeating arrangement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.