Control of switching trajectory in spin orbit torque devices by micromagnetic configuration
US10916282B2 · kind B2 · utility
1Cited by
3References
27Claims
0Family size
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Key dates
| Filing date | Jun 20, 2019 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Jun 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three-terminal device is disclosed having a magnetic tunnel junction (MTJ) and a spin orbit torque (SOT) generating layer. The MTJ has a first magnetic layer, a tunnel barrier layer underlying the first magnetic layer, and a second magnetic layer underlying the tunnel barrier, wherein the SOT generating layer is directly underlying the second magnetic layer. The second magnetic layer has a shape that is non-symmetrical, such that an average magnetization of a remnant state associated with the second magnetic layer has an in-plane component that is orthogonal to a current direction in the SOT generating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.