Semiconductor devices with various line widths and method of manufacturing the same
US10916476B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2020 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Jun 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are semiconductor devices having various line widths and a method of manufacturing the semiconductor device. The semiconductor device includes: a substrate including a first region and a second region, a plurality of first gate lines extending in a first direction in the first region and each having a first width in a second; a plurality of second gate lines extending in the first direction in the second region and each having a second width that is different from the first width in the second direction and a pitch that is the same as a pitch of the plurality of first gate lines; a spacer layer covering opposite side walls of each of the plurality of first gate lines and each of the plurality of second gate lines; and a first base layer arranged between the substrate and the spacer layer in the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.